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The electronic configuration of substitutional Fe in silicon

Ion implantations of radioactive /sup 57/Mn/sup +/ into differently doped silicon single crystals held at 300-600 K have been utilized for /sup 57/Fe Mossbauer studies of interstitial and substitutional Fe. Site and charge state assignments have been made on the basis of the determined hyperfine int...

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Detalles Bibliográficos
Autores principales:	Weyer, G, Burchard, A, Fanciulli, M, Fedosseev, V, Gunnlaugsson, H P, Mishin, V I, Sielemann, R
Lenguaje:	eng
Publicado:	1999
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1016/S0921-4526(99)00478-0 http://cds.cern.ch/record/438240

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