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Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors
Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large scale measurement of this effect by means of a particle beam. A significant improvement of the anodi...
| Autores principales: | , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/439164 |
| _version_ | 1780895574660218880 |
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| author | Nouais, D Bondila, M Bonvicini, V Cerello, P G Crescio, E Giubellino, P Hernández-Montoya, R Kolojvari, A A Montaño-Zetina, L M Nilsen, B S Piemonte, C Rachevsky, A Tosello, F Vacchi, A Wheadon, R |
| author_facet | Nouais, D Bondila, M Bonvicini, V Cerello, P G Crescio, E Giubellino, P Hernández-Montoya, R Kolojvari, A A Montaño-Zetina, L M Nilsen, B S Piemonte, C Rachevsky, A Tosello, F Vacchi, A Wheadon, R |
| author_sort | Nouais, D |
| collection | CERN |
| description | Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations. |
| id | cern-439164 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2000 |
| record_format | invenio |
| spelling | cern-4391642019-09-30T06:29:59Zhttp://cds.cern.ch/record/439164engNouais, DBondila, MBonvicini, VCerello, P GCrescio, EGiubellino, PHernández-Montoya, RKolojvari, A AMontaño-Zetina, L MNilsen, B SPiemonte, CRachevsky, ATosello, FVacchi, AWheadon, RCorrection of Dopant Concentration Fluctuation Effects in Silicon Drift DetectorsDetectors and Experimental TechniquesDopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations.CERN-ALI-2000-002CERN-ALICE-PUB-2000-002oai:cds.cern.ch:4391642000-02-29 |
| spellingShingle | Detectors and Experimental Techniques Nouais, D Bondila, M Bonvicini, V Cerello, P G Crescio, E Giubellino, P Hernández-Montoya, R Kolojvari, A A Montaño-Zetina, L M Nilsen, B S Piemonte, C Rachevsky, A Tosello, F Vacchi, A Wheadon, R Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors |
| title | Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors |
| title_full | Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors |
| title_fullStr | Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors |
| title_full_unstemmed | Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors |
| title_short | Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors |
| title_sort | correction of dopant concentration fluctuation effects in silicon drift detectors |
| topic | Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/439164 |
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