Correction of Dopant Concentration Fluctuation Effects in Silicon Drift Detectors

Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large scale measurement of this effect by means of a particle beam. A significant improvement of the anodi...

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Detalles Bibliográficos
Autores principales: Nouais, D, Bondila, M, Bonvicini, V, Cerello, P G, Crescio, E, Giubellino, P, Hernández-Montoya, R, Kolojvari, A A, Montaño-Zetina, L M, Nilsen, B S, Piemonte, C, Rachevsky, A, Tosello, F, Vacchi, A, Wheadon, R
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/439164

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