A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics

Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3*10 /sup 14/ p cm/sup -2/ and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the effi...

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Detalles Bibliográficos
Autores principales: Allport, P P, Andricek, L, Buttar, C M, Carter, J R, Costa, M, Drage, L M, Dubbs, T, Goodrick, M J, Greenall, A, Hill, J C, Jones, T, Moorhead, G F, Morgan, D, O'Shea, V, Phillips, P W, Raine, C, Riedler, P, Robinson, D, Saavedra, A, Sadrozinski, H F W, Sánchez, J, Smith, N A, Stapnes, Steinar, Terada, S, Unno, Y
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)00259-X
http://cds.cern.ch/record/460976
Descripción
Sumario:Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3*10 /sup 14/ p cm/sup -2/ and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC. (14 refs).

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