A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics

Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3*10 /sup 14/ p cm/sup -2/ and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the effi...

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Detalles Bibliográficos
Autores principales: Allport, P P, Andricek, L, Buttar, C M, Carter, J R, Costa, M, Drage, L M, Dubbs, T, Goodrick, M J, Greenall, A, Hill, J C, Jones, T, Moorhead, G F, Morgan, D, O'Shea, V, Phillips, P W, Raine, C, Riedler, P, Robinson, D, Saavedra, A, Sadrozinski, H F W, Sánchez, J, Smith, N A, Stapnes, Steinar, Terada, S, Unno, Y
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)00259-X
http://cds.cern.ch/record/460976

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