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Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles
High-resistivity p/sup +/-n-n/sup +/ planar diodes were irradiated with neutrons to fluences up to 2*10/sup 14/ cm/sup -2/ 1 MeV neutron NIEL equivalent and with pions to 0.47*10/sup 14/ cm/sup -2/. Special care was taken to irradiate samples under strictly controlled conditions (temperature, bias)....
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(00)00258-8 http://cds.cern.ch/record/460977 |