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Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles

High-resistivity p/sup +/-n-n/sup +/ planar diodes were irradiated with neutrons to fluences up to 2*10/sup 14/ cm/sup -2/ 1 MeV neutron NIEL equivalent and with pions to 0.47*10/sup 14/ cm/sup -2/. Special care was taken to irradiate samples under strictly controlled conditions (temperature, bias)....

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Detalles Bibliográficos
Autores principales:	Cindro, V, Kramberger, G, Mikuz, M, Tadel, M, Zontar, D
Lenguaje:	eng
Publicado:	2000
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/S0168-9002(00)00258-8 http://cds.cern.ch/record/460977

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