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Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon...
Autores principales: | , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2000
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/23.856513 http://cds.cern.ch/record/466489 |
_version_ | 1780896422985465856 |
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author | Cho Hyo Sung Xie, X B Chien, C Y Liang, G W Huang, W Dezillie, B Eremin, V V Li, Z |
author_facet | Cho Hyo Sung Xie, X B Chien, C Y Liang, G W Huang, W Dezillie, B Eremin, V V Li, Z |
author_sort | Cho Hyo Sung |
collection | CERN |
description | The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n/sup + //n/p/sup +/ and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6*10/sup 14/ n/cm/sup 2/, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately. (7 refs). |
id | cern-466489 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2000 |
record_format | invenio |
spelling | cern-4664892019-09-30T06:29:59Zdoi:10.1109/23.856513http://cds.cern.ch/record/466489engCho Hyo SungXie, X BChien, C YLiang, G WHuang, WDezillie, BEremin, V VLi, ZCharacterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiationDetectors and Experimental TechniquesThe lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n/sup + //n/p/sup +/ and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6*10/sup 14/ n/cm/sup 2/, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately. (7 refs).oai:cds.cern.ch:4664892000 |
spellingShingle | Detectors and Experimental Techniques Cho Hyo Sung Xie, X B Chien, C Y Liang, G W Huang, W Dezillie, B Eremin, V V Li, Z Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
title | Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
title_full | Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
title_fullStr | Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
title_full_unstemmed | Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
title_short | Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
title_sort | characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1109/23.856513 http://cds.cern.ch/record/466489 |
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