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Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation

The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon...

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Autores principales: Cho Hyo Sung, Xie, X B, Chien, C Y, Liang, G W, Huang, W, Dezillie, B, Eremin, V V, Li, Z
Lenguaje:eng
Publicado: 2000
Materias:
Acceso en línea:https://dx.doi.org/10.1109/23.856513
http://cds.cern.ch/record/466489
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author Cho Hyo Sung
Xie, X B
Chien, C Y
Liang, G W
Huang, W
Dezillie, B
Eremin, V V
Li, Z
author_facet Cho Hyo Sung
Xie, X B
Chien, C Y
Liang, G W
Huang, W
Dezillie, B
Eremin, V V
Li, Z
author_sort Cho Hyo Sung
collection CERN
description The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n/sup + //n/p/sup +/ and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6*10/sup 14/ n/cm/sup 2/, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately. (7 refs).
id cern-466489
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-4664892019-09-30T06:29:59Zdoi:10.1109/23.856513http://cds.cern.ch/record/466489engCho Hyo SungXie, X BChien, C YLiang, G WHuang, WDezillie, BEremin, V VLi, ZCharacterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiationDetectors and Experimental TechniquesThe lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n/sup + //n/p/sup +/ and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6*10/sup 14/ n/cm/sup 2/, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately. (7 refs).oai:cds.cern.ch:4664892000
spellingShingle Detectors and Experimental Techniques
Cho Hyo Sung
Xie, X B
Chien, C Y
Liang, G W
Huang, W
Dezillie, B
Eremin, V V
Li, Z
Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
title Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
title_full Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
title_fullStr Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
title_full_unstemmed Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
title_short Characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
title_sort characterization of silicon pixel detectors with the $n^{+}/n/p^{+}$ and double-sided multiguard ring structure before and after neutron irradiation
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/23.856513
http://cds.cern.ch/record/466489
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