A measurement of Lorentz Angle of radiation-hard Pixel Sensors

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at differ...

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Detalles Bibliográficos
Autor principal: Aleppo, Mario
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)00364-3
http://cds.cern.ch/record/481957
Descripción
Sumario:Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

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