A measurement of Lorentz Angle of radiation-hard Pixel Sensors

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at differ...

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Detalles Bibliográficos
Autor principal: Aleppo, Mario
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)00364-3
http://cds.cern.ch/record/481957
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author Aleppo, Mario
author_facet Aleppo, Mario
author_sort Aleppo, Mario
collection CERN
description Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.
id cern-481957
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-4819572023-03-14T17:09:23Zdoi:10.1016/S0168-9002(01)00364-3http://cds.cern.ch/record/481957engAleppo, MarioA measurement of Lorentz Angle of radiation-hard Pixel SensorsDetectors and Experimental TechniquesOther Fields of PhysicsSilicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.physics/0012050CERN-OPEN-2000-346CERN-OPEN-2000-346oai:cds.cern.ch:4819572000-08-29
spellingShingle Detectors and Experimental Techniques
Other Fields of Physics
Aleppo, Mario
A measurement of Lorentz Angle of radiation-hard Pixel Sensors
title A measurement of Lorentz Angle of radiation-hard Pixel Sensors
title_full A measurement of Lorentz Angle of radiation-hard Pixel Sensors
title_fullStr A measurement of Lorentz Angle of radiation-hard Pixel Sensors
title_full_unstemmed A measurement of Lorentz Angle of radiation-hard Pixel Sensors
title_short A measurement of Lorentz Angle of radiation-hard Pixel Sensors
title_sort measurement of lorentz angle of radiation-hard pixel sensors
topic Detectors and Experimental Techniques
Other Fields of Physics
url https://dx.doi.org/10.1016/S0168-9002(01)00364-3
http://cds.cern.ch/record/481957
work_keys_str_mv AT aleppomario ameasurementoflorentzangleofradiationhardpixelsensors
AT aleppomario measurementoflorentzangleofradiationhardpixelsensors

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