Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique

The hydrogen passivation of As donors in Si was studied using the gamma-e- Perturbed Angular Correlation technique. The samples were doped with 73As by implanting the parent isotope 73Se at room temperature and 60 keV energy, to a dose of 2x1013 at/cm2. After removing the radiation damage, hydrogen was implanted with low energy (300eV), to a dose of 5x1015 at/cm2. Two electric field gradients were observed and assigned to H correlated complexes formed at the As donors. These complexes dissociate at temperatures lower than 1070 K.