Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique

The hydrogen passivation of As donors in Si was studied using the gamma-e- Perturbed Angular Correlation technique. The samples were doped with 73As by implanting the parent isotope 73Se at room temperature and 60 keV energy, to a dose of 2x1013 at/cm2. After removing the radiation damage, hydrogen...

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Detalles Bibliográficos
Autores principales: Correia, J G, Marques, J G, Forkel-Wirth, Doris, Burchard, A, Magerle, R, Deicher, M
Lenguaje:eng
Publicado: 1996
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/486719
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author Correia, J G
Marques, J G
Forkel-Wirth, Doris
Burchard, A
Magerle, R
Deicher, M
author_facet Correia, J G
Marques, J G
Forkel-Wirth, Doris
Burchard, A
Magerle, R
Deicher, M
author_sort Correia, J G
collection CERN
description The hydrogen passivation of As donors in Si was studied using the gamma-e- Perturbed Angular Correlation technique. The samples were doped with 73As by implanting the parent isotope 73Se at room temperature and 60 keV energy, to a dose of 2x1013 at/cm2. After removing the radiation damage, hydrogen was implanted with low energy (300eV), to a dose of 5x1015 at/cm2. Two electric field gradients were observed and assigned to H correlated complexes formed at the As donors. These complexes dissociate at temperatures lower than 1070 K.
id cern-486719
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
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spelling cern-4867192019-09-30T06:29:59Zhttp://cds.cern.ch/record/486719engCorreia, J GMarques, J GForkel-Wirth, DorisBurchard, AMagerle, RDeicher, MMicroscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC TechniqueCondensed MatterThe hydrogen passivation of As donors in Si was studied using the gamma-e- Perturbed Angular Correlation technique. The samples were doped with 73As by implanting the parent isotope 73Se at room temperature and 60 keV energy, to a dose of 2x1013 at/cm2. After removing the radiation damage, hydrogen was implanted with low energy (300eV), to a dose of 5x1015 at/cm2. Two electric field gradients were observed and assigned to H correlated complexes formed at the As donors. These complexes dissociate at temperatures lower than 1070 K.CERN-OPEN-2001-005oai:cds.cern.ch:4867191996-07-29
spellingShingle Condensed Matter
Correia, J G
Marques, J G
Forkel-Wirth, Doris
Burchard, A
Magerle, R
Deicher, M
Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
title Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
title_full Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
title_fullStr Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
title_full_unstemmed Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
title_short Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
title_sort microscopic studies of the hydrogen passivation in n-type silicon: a new application of the 73as e--g pac technique
topic Condensed Matter
url http://cds.cern.ch/record/486719
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AT marquesjg microscopicstudiesofthehydrogenpassivationinntypesiliconanewapplicationofthe73asegpactechnique
AT forkelwirthdoris microscopicstudiesofthehydrogenpassivationinntypesiliconanewapplicationofthe73asegpactechnique
AT burcharda microscopicstudiesofthehydrogenpassivationinntypesiliconanewapplicationofthe73asegpactechnique
AT magerler microscopicstudiesofthehydrogenpassivationinntypesiliconanewapplicationofthe73asegpactechnique
AT deicherm microscopicstudiesofthehydrogenpassivationinntypesiliconanewapplicationofthe73asegpactechnique

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