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Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique

The hydrogen passivation of As donors in Si was studied using the gamma-e- Perturbed Angular Correlation technique. The samples were doped with 73As by implanting the parent isotope 73Se at room temperature and 60 keV energy, to a dose of 2x1013 at/cm2. After removing the radiation damage, hydrogen...

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Detalles Bibliográficos
Autores principales:	Correia, J G, Marques, J G, Forkel-Wirth, Doris, Burchard, A, Magerle, R, Deicher, M
Lenguaje:	eng
Publicado:	1996
Materias:	Condensed Matter
Acceso en línea:	http://cds.cern.ch/record/486719

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