Microscopic studies of implanted 73As in diamond

In this work we present results on the lattice location and the microscopic surroundings of As implanted into diamond. A mixture of the isobars 73Se and 73As was implanted to a dose of 1.0x1014 at/cm2 with 60 keV energy. Complementary g-e- Perturbed Angular Correlations (PAC), Emission Channeling (EC) and RBS/channeling (RBS/C) measurements were performed for the same sample, after full decay of 73Se to 73As. After annealing at 1400 K the EC and RBS/C spectra show that more than 50% of the As nuclei reside in substitutional positions, although some residual damage is still seen within the implanted range. On the other hand, the PAC data shows that significant annealing of the lattice damage occurred only in the vicinity of 30% of the implanted As atoms, and that these have remaining defects in their neighborhood.