Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$

We report on the annealing behaviour of GaN grown on sapphire after implantation of 117Cd(117In). Isochronic annealing has been performed in order to remove the implantation induced lattice damage in evacuated quartz ampoules with additional Al. The extent of the lattice damage is investigated with...

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Detalles Bibliográficos
Autores principales: Dietrich, M, Deicher, M, Stötzler, A, Weissenborn, R
Lenguaje:eng
Publicado: 2001
Materias:
Particle Physics - Experiment
Acceso en línea:https://dx.doi.org/10.1016/S0375-9474(01)01589-5
http://cds.cern.ch/record/488447
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author Dietrich, M
Deicher, M
Stötzler, A
Weissenborn, R
author_facet Dietrich, M
Deicher, M
Stötzler, A
Weissenborn, R
author_sort Dietrich, M
collection CERN
description We report on the annealing behaviour of GaN grown on sapphire after implantation of 117Cd(117In). Isochronic annealing has been performed in order to remove the implantation induced lattice damage in evacuated quartz ampoules with additional Al. The extent of the lattice damage is investigated with perturbed gg-angular correlation spectroscopy (PAC). The implantation damage is annealed at temperatures above 1073 K to a large extent. 82(5) % of the probes are found on the Ga-site characterized by a quadrupole coupling constant of 20.9(1) MHz. After H loading, an additional interaction appears which is attributed to 117Cd(117In)-H pairs.
id cern-488447
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
record_format invenio
spelling cern-4884472019-09-30T06:29:59Zdoi:10.1016/S0375-9474(01)01589-5http://cds.cern.ch/record/488447engDietrich, MDeicher, MStötzler, AWeissenborn, RFormation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$Particle Physics - ExperimentWe report on the annealing behaviour of GaN grown on sapphire after implantation of 117Cd(117In). Isochronic annealing has been performed in order to remove the implantation induced lattice damage in evacuated quartz ampoules with additional Al. The extent of the lattice damage is investigated with perturbed gg-angular correlation spectroscopy (PAC). The implantation damage is annealed at temperatures above 1073 K to a large extent. 82(5) % of the probes are found on the Ga-site characterized by a quadrupole coupling constant of 20.9(1) MHz. After H loading, an additional interaction appears which is attributed to 117Cd(117In)-H pairs.CERN-EP-2001-015oai:cds.cern.ch:4884472001-02-12
spellingShingle Particle Physics - Experiment
Dietrich, M
Deicher, M
Stötzler, A
Weissenborn, R
Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
title Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
title_full Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
title_fullStr Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
title_full_unstemmed Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
title_short Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
title_sort formation of $^{117}in-h$ pairs after annealing of gan implanted with $^{117}cd(^{117}in)$
topic Particle Physics - Experiment
url https://dx.doi.org/10.1016/S0375-9474(01)01589-5
http://cds.cern.ch/record/488447
work_keys_str_mv AT dietrichm formationof117inhpairsafterannealingofganimplantedwith117cd117in
AT deicherm formationof117inhpairsafterannealingofganimplantedwith117cd117in
AT stotzlera formationof117inhpairsafterannealingofganimplantedwith117cd117in
AT weissenbornr formationof117inhpairsafterannealingofganimplantedwith117cd117in

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