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Formation of $^{117}In-H$ pairs after annealing of GaN implanted with $^{117}Cd(^{117}In)$
We report on the annealing behaviour of GaN grown on sapphire after implantation of 117Cd(117In). Isochronic annealing has been performed in order to remove the implantation induced lattice damage in evacuated quartz ampoules with additional Al. The extent of the lattice damage is investigated with...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0375-9474(01)01589-5 http://cds.cern.ch/record/488447 |