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Development of front-end electronics and TDC LSI for the ATLAS MDT
Architecture of the front-end electronics for the ATLAS muon precision chamber (MDT) is presented. Especially, test results of a prototype TDC chip are described in detail. The chip was fabricated in a 0.3 mu m CMOS gate-array technology. Measurements of critical elements of the chip such as the PLL...
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Lenguaje: | eng |
Publicado: |
2000
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(00)00658-6 http://cds.cern.ch/record/494631 |
Sumario: | Architecture of the front-end electronics for the ATLAS muon precision chamber (MDT) is presented. Especially, test results of a prototype TDC chip are described in detail. The chip was fabricated in a 0.3 mu m CMOS gate-array technology. Measurements of critical elements of the chip such as the PLL, and data buffering circuits demonstrated adequate performance. The effect of gamma-ray irradiation, using a /sup 60/Co source, and neutron irradiation, were also examined. The test results revealed radiation tolerance adequate for the operation of the circuits in the environment of the ATLAS MDT. Mounting of the front-end electronics to the MDT is scheduled to start in the year 2001. (10 refs). |
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