Radiation damage studies of silicon microstrip sensors

Various types of large area silicon microstrip detectors were fabricated for the development of radiation-tolerant detectors that will operate in the LHC ATLAS SCT. The detectors were irradiated with 12-GeV protons at KEK to fluences of 1.7*10/sup 14/ and 4.2*10/sup 14 / protons/cm/sup 2/. Irradiated samples included n-on-n detectors with 4 k Omega cm bulk resistivity and p-on-n detectors with 1 k Omega cm and 4 k Omega cm bulk resistivities. Four patterns of p-stop structures are configured in the n-on-n detectors. Although Hamamatsu fabricated most of the detectors, p-on-n detectors by SINTEF are also included, as well as those fabricated in a modified process by Hamamatsu. The detector performances after irradiation that are compared are the probability of creation of faulty coupling capacitors, C-V characteristics, charge curves, and total leakage current. The p-on-n are similar to the n-on-n detectors in these performances, and will remain operational in the ATLAS radiation environment. (12 refs).