Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors

The charge collection efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have bee...

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Detalles Bibliográficos
Autores principales: Borello, L, Dell'Orso, R, Dutta, S, Gennai, Simone, Mariani, M, Messineo, A, Segneri, G, Starodumov, Andrei, Teodorescu, L, Tonelli, G, Verdini, P G
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)01200-6
http://cds.cern.ch/record/512981
Descripción
Sumario:The charge collection efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and signal-to-noise ratio under different operating conditions. (10 refs).

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