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Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors
The charge collection efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have bee...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(00)01200-6 http://cds.cern.ch/record/512981 |
| _version_ | 1780897543125729280 |
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| author | Borello, L Dell'Orso, R Dutta, S Gennai, Simone Mariani, M Messineo, A Segneri, G Starodumov, Andrei Teodorescu, L Tonelli, G Verdini, P G |
| author_facet | Borello, L Dell'Orso, R Dutta, S Gennai, Simone Mariani, M Messineo, A Segneri, G Starodumov, Andrei Teodorescu, L Tonelli, G Verdini, P G |
| author_sort | Borello, L |
| collection | CERN |
| description | The charge collection efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and signal-to-noise ratio under different operating conditions. (10 refs). |
| id | cern-512981 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2001 |
| record_format | invenio |
| spelling | cern-5129812019-09-30T06:29:59Zdoi:10.1016/S0168-9002(00)01200-6http://cds.cern.ch/record/512981engBorello, LDell'Orso, RDutta, SGennai, SimoneMariani, MMessineo, ASegneri, GStarodumov, AndreiTeodorescu, LTonelli, GVerdini, P GComprehensive study of the effects of irradiation on charge collection efficiency in silicon detectorsDetectors and Experimental TechniquesThe charge collection efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and signal-to-noise ratio under different operating conditions. (10 refs).oai:cds.cern.ch:5129812001 |
| spellingShingle | Detectors and Experimental Techniques Borello, L Dell'Orso, R Dutta, S Gennai, Simone Mariani, M Messineo, A Segneri, G Starodumov, Andrei Teodorescu, L Tonelli, G Verdini, P G Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| title | Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| title_full | Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| title_fullStr | Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| title_full_unstemmed | Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| title_short | Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| title_sort | comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/S0168-9002(00)01200-6 http://cds.cern.ch/record/512981 |
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