Review on the development of cryogenic silicon detectors

In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed then show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one orde...

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Detalles Bibliográficos
Autores principales: Casagrande, L, Abreu, M C, Bell, W H, Berglund, P, de Boer, Wim, Borer, K, Buontempo, S, Chapuy, S, Cindro, V, D'Ambrosio, N, Da Vià, C, Devine, S R H, Dezillie, B, Dimcovski, Zlatomir, Eremin, V V, Esposito, A P, Granata, V, Grigoriev, E, Hauler, F, Heijne, Erik H M, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, T O, O'Shea, V, Pagano, S, Palmieri, V G, Paul, S, Pretzl, Klaus P, Rato-Mendes, P, Ruggiero, G, Smith, K, Sonderegger, P, Sousa, P, Verbitskaya, E, Watts, S, Zavrtanik, M
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)01192-X
http://cds.cern.ch/record/512984
Descripción
Sumario:In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed then show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude, in particular, a 400 mu m thick "double-p" silicon detector irradiated up to 1*10 /sup 15/ n/cm/sup 2/ delivers a mip signal of about 27000 electrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed. (5 refs).

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