Review on the development of cryogenic silicon detectors

In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed then show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one orde...

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Detalles Bibliográficos
Autores principales: Casagrande, L, Abreu, M C, Bell, W H, Berglund, P, de Boer, Wim, Borer, K, Buontempo, S, Chapuy, S, Cindro, V, D'Ambrosio, N, Da Vià, C, Devine, S R H, Dezillie, B, Dimcovski, Zlatomir, Eremin, V V, Esposito, A P, Granata, V, Grigoriev, E, Hauler, F, Heijne, Erik H M, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, T O, O'Shea, V, Pagano, S, Palmieri, V G, Paul, S, Pretzl, Klaus P, Rato-Mendes, P, Ruggiero, G, Smith, K, Sonderegger, P, Sousa, P, Verbitskaya, E, Watts, S, Zavrtanik, M
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)01192-X
http://cds.cern.ch/record/512984
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author Casagrande, L
Abreu, M C
Bell, W H
Berglund, P
de Boer, Wim
Borer, K
Buontempo, S
Chapuy, S
Cindro, V
D'Ambrosio, N
Da Vià, C
Devine, S R H
Dezillie, B
Dimcovski, Zlatomir
Eremin, V V
Esposito, A P
Granata, V
Grigoriev, E
Hauler, F
Heijne, Erik H M
Heising, S
Janos, S
Jungermann, L
Konorov, I
Li, Z
Lourenço, C
Mikuz, M
Niinikoski, T O
O'Shea, V
Pagano, S
Palmieri, V G
Paul, S
Pretzl, Klaus P
Rato-Mendes, P
Ruggiero, G
Smith, K
Sonderegger, P
Sousa, P
Verbitskaya, E
Watts, S
Zavrtanik, M
author_facet Casagrande, L
Abreu, M C
Bell, W H
Berglund, P
de Boer, Wim
Borer, K
Buontempo, S
Chapuy, S
Cindro, V
D'Ambrosio, N
Da Vià, C
Devine, S R H
Dezillie, B
Dimcovski, Zlatomir
Eremin, V V
Esposito, A P
Granata, V
Grigoriev, E
Hauler, F
Heijne, Erik H M
Heising, S
Janos, S
Jungermann, L
Konorov, I
Li, Z
Lourenço, C
Mikuz, M
Niinikoski, T O
O'Shea, V
Pagano, S
Palmieri, V G
Paul, S
Pretzl, Klaus P
Rato-Mendes, P
Ruggiero, G
Smith, K
Sonderegger, P
Sousa, P
Verbitskaya, E
Watts, S
Zavrtanik, M
author_sort Casagrande, L
collection CERN
description In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed then show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude, in particular, a 400 mu m thick "double-p" silicon detector irradiated up to 1*10 /sup 15/ n/cm/sup 2/ delivers a mip signal of about 27000 electrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed. (5 refs).
id cern-512984
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
record_format invenio
spelling cern-5129842019-09-30T06:29:59Zdoi:10.1016/S0168-9002(00)01192-Xhttp://cds.cern.ch/record/512984engCasagrande, LAbreu, M CBell, W HBerglund, Pde Boer, WimBorer, KBuontempo, SChapuy, SCindro, VD'Ambrosio, NDa Vià, CDevine, S R HDezillie, BDimcovski, ZlatomirEremin, V VEsposito, A PGranata, VGrigoriev, EHauler, FHeijne, Erik H MHeising, SJanos, SJungermann, LKonorov, ILi, ZLourenço, CMikuz, MNiinikoski, T OO'Shea, VPagano, SPalmieri, V GPaul, SPretzl, Klaus PRato-Mendes, PRuggiero, GSmith, KSonderegger, PSousa, PVerbitskaya, EWatts, SZavrtanik, MReview on the development of cryogenic silicon detectorsDetectors and Experimental TechniquesIn this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed then show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude, in particular, a 400 mu m thick "double-p" silicon detector irradiated up to 1*10 /sup 15/ n/cm/sup 2/ delivers a mip signal of about 27000 electrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed. (5 refs).oai:cds.cern.ch:5129842001
spellingShingle Detectors and Experimental Techniques
Casagrande, L
Abreu, M C
Bell, W H
Berglund, P
de Boer, Wim
Borer, K
Buontempo, S
Chapuy, S
Cindro, V
D'Ambrosio, N
Da Vià, C
Devine, S R H
Dezillie, B
Dimcovski, Zlatomir
Eremin, V V
Esposito, A P
Granata, V
Grigoriev, E
Hauler, F
Heijne, Erik H M
Heising, S
Janos, S
Jungermann, L
Konorov, I
Li, Z
Lourenço, C
Mikuz, M
Niinikoski, T O
O'Shea, V
Pagano, S
Palmieri, V G
Paul, S
Pretzl, Klaus P
Rato-Mendes, P
Ruggiero, G
Smith, K
Sonderegger, P
Sousa, P
Verbitskaya, E
Watts, S
Zavrtanik, M
Review on the development of cryogenic silicon detectors
title Review on the development of cryogenic silicon detectors
title_full Review on the development of cryogenic silicon detectors
title_fullStr Review on the development of cryogenic silicon detectors
title_full_unstemmed Review on the development of cryogenic silicon detectors
title_short Review on the development of cryogenic silicon detectors
title_sort review on the development of cryogenic silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(00)01192-X
http://cds.cern.ch/record/512984
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