Characteristics of irradiated silicon microstrip detectors with <100> and <111> substrates

In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment, we have irradiated various types of silicon sensors with 12 CeV protons at KEK. Among the other properties, we made a comparative study of characteristics of the sensors with two wafer planes <111> and <...

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Detalles Bibliográficos
Autores principales: Akimoto, T, Arai, S, Hara, K, Nakayama, T, Ikegami, Y, Iwata, Y, Kobayashi, H, Kohriki, T, Kondo, T, Nakano, I, Ohsugi, T, Shimojima, M, Shinma, S, Takashima, R, Terada, S, Ujiie, N, Unno, Y, Yamamoto, K, Yamamura, K
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)00588-5
http://cds.cern.ch/record/516835

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