Optimization of the silicon sensors for the CMS tracker

The CMS experiment at the LHC will comprise a large silicon strip tracker. This article highlights some of the results obtained in the R&D studies for the optimization of its silicon sensors. Measurements of the capacitances and of the high voltage stability of the devices are presented before a...

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Detalles Bibliográficos
Autores principales: Albergo, S, Angarano, M M, Azzi, P, Babucci, E, Bacchetta, N, Bader, A J, Bagliesi, G, Basti, A, Biggeri, U, Biino, C, Bilei, G M, Bisello, D, Boemi, D, Bosi, F, Borello, L, Braibant, S, Breuker, Horst, Unettib, M T, Bruzzi, Mara, Buffini, A, Busoni, S, Candelori, A, Caner, A, Castaldi, R, Castro, A, Catacchini, E, Checcucci, B, Ciampolini, P, Civinini, C, Costa, M, Creanza, D, D'Alessandro, R, Demaria, N, De Palma, M, Dell'Orso, R, Dutta, S, Favro, G, Fiore, L, Focardi, E, French, M, Freudenreich, Klaus, Frey, A, Friedl, M, Fürtjes, A, Giassi, A, Giorgi, M A, Giraldo, A, Glessing, W D, Gu, W H, Hall, G, Hammarström, R, Hebbeker, T, Honkanen, A, Honma, A, Hrubec, Josef, Huhtinen, M, Kaminski, A, Karimäki, V, König, S, Krammer, Manfred, Lariccia, P, Lenzi, M, Loreti, M, Lübelsmeyer, K, Lustermann, W, Mättig, P, Maggi, G, Mannelli, M, Mantovani, G C, Marchioro, A, Mariotti, C, Martignon, G, McEvoy, B, Meschini, M, Messineo, A, Migliore, E, My, S, Neviani, A, Paccagella, A, Palla, Fabrizio, Pandoulas, D, Papi, A, Parrini, G, Passeri, D, Pernicka, Manfred, Pieri, M, Piperov, S, Potenza, R, Radicci, V, Raffaelli, F, Raymond, M, Siedling, R, Silvestris, L, Starodumov, Andrei, Stavitski, I, Surrow, B, Tempesta, P, Tonelli, G, Tricomi, A, Tuominiemi, Jorma, Tuuva, T, Verdini, P G, Viertel, Gert M, Xie, Z, Yahong, L, Watts, S, Wittmer, B
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)00544-7
http://cds.cern.ch/record/516838
Descripción
Sumario:The CMS experiment at the LHC will comprise a large silicon strip tracker. This article highlights some of the results obtained in the R&D studies for the optimization of its silicon sensors. Measurements of the capacitances and of the high voltage stability of the devices are presented before and after irradiation to the dose expected after the full lifetime of the tracker. (7 refs).

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