Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker

Radiation damage in 1310 nm InGaAsP/InP multi-quantum-well lasers caused by 0.8 MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias curr...

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Detalles Bibliográficos
Autores principales: Gill, K, Cervelli, G, Grabit, R, Jensen, F, Vasey, F
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1117/12.405342
http://cds.cern.ch/record/516845
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author Gill, K
Cervelli, G
Grabit, R
Jensen, F
Vasey, F
author_facet Gill, K
Cervelli, G
Grabit, R
Jensen, F
Vasey, F
author_sort Gill, K
collection CERN
description Radiation damage in 1310 nm InGaAsP/InP multi-quantum-well lasers caused by 0.8 MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing. This model can then be used to predict the long-term damage expected for lasers operating inside the CMS tracker. (19 refs).
id cern-516845
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-5168452019-09-30T06:29:59Zdoi:10.1117/12.405342http://cds.cern.ch/record/516845engGill, KCervelli, GGrabit, RJensen, FVasey, FRadiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS trackerDetectors and Experimental TechniquesRadiation damage in 1310 nm InGaAsP/InP multi-quantum-well lasers caused by 0.8 MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing. This model can then be used to predict the long-term damage expected for lasers operating inside the CMS tracker. (19 refs).oai:cds.cern.ch:5168452000
spellingShingle Detectors and Experimental Techniques
Gill, K
Cervelli, G
Grabit, R
Jensen, F
Vasey, F
Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker
title Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker
title_full Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker
title_fullStr Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker
title_full_unstemmed Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker
title_short Radiation damage and annealing in 1310 nm InGaAsP/InP lasers for the CMS tracker
title_sort radiation damage and annealing in 1310 nm ingaasp/inp lasers for the cms tracker
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1117/12.405342
http://cds.cern.ch/record/516845
work_keys_str_mv AT gillk radiationdamageandannealingin1310nmingaaspinplasersforthecmstracker
AT cervellig radiationdamageandannealingin1310nmingaaspinplasersforthecmstracker
AT grabitr radiationdamageandannealingin1310nmingaaspinplasersforthecmstracker
AT jensenf radiationdamageandannealingin1310nmingaaspinplasersforthecmstracker
AT vaseyf radiationdamageandannealingin1310nmingaaspinplasersforthecmstracker

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