Fabrication of ATLAS pixel detector prototypes at IRST

We report on the development of a fabrication technology for n-on-n silicon pixel detectors oriented to the ATLAS experiment at LHC. The main processing issues and some selected results from the electrical characterization of detector prototypes and related test structures are presented and discusse...

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Detalles Bibliográficos
Autores principales: Boscardin, M, Betta, G F D, Gregori, P, Zen, M, Zori, N
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)00353-9
http://cds.cern.ch/record/516879
Descripción
Sumario:We report on the development of a fabrication technology for n-on-n silicon pixel detectors oriented to the ATLAS experiment at LHC. The main processing issues and some selected results from the electrical characterization of detector prototypes and related test structures are presented and discussed. (5 refs).

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