Silicon pixel capacitance

Capacitance measurements have been made on silicon pixel sensors of types n/sup +/-on-n, p/sup +/-on-n, and n/sup +/-on-p. The arrays test a variety of implant and gap widths, and the n/sup +/-on-n devices test several p-stop designs. The measurements examine inter- pixel and backplane contributions...

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Detalles Bibliográficos
Autores principales: Gorfine, G W, Hoeferkamp, M, Santistevan, G, Seidel, S
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)00348-5
http://cds.cern.ch/record/516881
Descripción
Sumario:Capacitance measurements have been made on silicon pixel sensors of types n/sup +/-on-n, p/sup +/-on-n, and n/sup +/-on-p. The arrays test a variety of implant and gap widths, and the n/sup +/-on-n devices test several p-stop designs. The measurements examine inter- pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2. (6 refs).

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