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A large dynamic range radiation-tolerant analog memory in a quarter- micron CMOS technology
An analog memory prototype containing 8*128 cells has been designed in a commercial quarter-micron CMOS process. The aim of this work is to investigate the possibility of designing large dynamic range mixed-mode switched capacitor circuits for high-energy physics (HEP) applications in deep submicron...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/23.940095 http://cds.cern.ch/record/521706 |
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