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The Behavior of P-I-N Diode under High Intense Laser Irradiation

Detalles Bibliográficos
Autores principales: Skorobogatov, P K, Artamonov, S A, Ahabaev, B A
Lenguaje:eng
Publicado: CERN 2001
Materias:
Acceso en línea:https://dx.doi.org/10.5170/CERN-2001-005.409
http://cds.cern.ch/record/531639
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author Skorobogatov, P K
Artamonov, S A
Ahabaev, B A
author_facet Skorobogatov, P K
Artamonov, S A
Ahabaev, B A
author_sort Skorobogatov, P K
collection CERN
id cern-531639
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
publisher CERN
record_format invenio
spelling cern-5316392019-09-30T06:29:59Zdoi:10.5170/CERN-2001-005.409http://cds.cern.ch/record/531639engSkorobogatov, P KArtamonov, S AAhabaev, B AThe Behavior of P-I-N Diode under High Intense Laser IrradiationDetectors and Experimental TechniquesCERNoai:cds.cern.ch:5316392001
spellingShingle Detectors and Experimental Techniques
Skorobogatov, P K
Artamonov, S A
Ahabaev, B A
The Behavior of P-I-N Diode under High Intense Laser Irradiation
title The Behavior of P-I-N Diode under High Intense Laser Irradiation
title_full The Behavior of P-I-N Diode under High Intense Laser Irradiation
title_fullStr The Behavior of P-I-N Diode under High Intense Laser Irradiation
title_full_unstemmed The Behavior of P-I-N Diode under High Intense Laser Irradiation
title_short The Behavior of P-I-N Diode under High Intense Laser Irradiation
title_sort behavior of p-i-n diode under high intense laser irradiation
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2001-005.409
http://cds.cern.ch/record/531639
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