Cargando…

Charge collection on proton irradiated oxygenated diodes

Detalles Bibliográficos
Autores principales:	Angarano, M M, Creanza, D, De Palma, M, Preda, M V
Lenguaje:	eng
Publicado:	1998
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/539866

Ejemplares similares

Electrical characterization of standard and oxygenated irradiated ROSE diodes
por: Augelli, V, et al.
Publicado: (1999)

Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
por: Beattie, L, et al.
Publicado: (1997)

Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
por: Cindro, V, et al.
Publicado: (2004)

Charge collection and field profile in heavily irradiated Si diodes
por: Chilingarov, A G
Publicado: (1998)

Charge Transport in Non-Irradiated and Irradiated Silicon Diodes
por: Leroy, C, et al.
Publicado: (1998)

Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes
por: Boscardin, Maurizio, et al.
Publicado: (2005)

Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
por: Mandić, I, et al.
Publicado: (2004)

Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles
por: Cindro, V, et al.
Publicado: (2000)

Study of electrical properties and charge collection of silicon detectors under neutron, proton and gamma irradiations
por: Leroy, C, et al.
Publicado: (1993)

Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes
por: Boscardin, M, et al.
Publicado: (2004)

Charge collection in irradiated HV-CMOS detectors
por: Hiti, B, et al.
Publicado: (2019)

Study of charge collection and noise in non-irradiated and irradiated silicon detectors
por: Leroy, C, et al.
Publicado: (1996)

The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
por: Liao, C, et al.
Publicado: (2022)

Charge collection in irradiated silicon detectors
por: Krasel, Olaf
Publicado: (2018)

Charge collection studies in irradiated HV-CMOS particle detectors
por: Affolder, A, et al.
Publicado: (2016)

First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
por: Casse, G, et al.
Publicado: (2004)

Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
por: Borer, K, et al.
Publicado: (1999)

Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
por: Gurimskaya, Yana, et al.
Publicado: (2020)

Irradiation tests on standard and oxygenated ROSE diodes produced by ST Microelectronics and Sintef
por: Moll, Michael
Publicado: (2000)

Test Beam Results on a Double-Sided Double-Metal Irradiated Microstrip Detector Before and After Neutron Irradiation
por: Angarano, Matteo Maria, et al.
Publicado: (1997)

Characteristics and SPICE Simulation of a Single-Sided, n+ on n Si Strip Detector Before and After Neutron Irradiation
por: Angarano, Matteo Maria, et al.
Publicado: (1998)

Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors
por: Klingenberg, R, et al.
Publicado: (2006)

Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
por: Da Vià, C, et al.
Publicado: (1999)

Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors
por: Borello, L, et al.
Publicado: (2001)

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors
por: Peltola, Timo Hannu Tapani
Publicado: (2014)

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors
por: Peltola, T.
Publicado: (2014)

Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
por: Bates, R.L., et al.
Publicado: (1997)

The impact of neutral base region on the collected charge in heavily irradiated silicon detectors
por: Verbitskaya, E, et al.
Publicado: (2010)

An annealing study of charge collection efficiency on Float-Zone p-on-n ministrip sensors irradiated with 24 GeV/c protons and 20 MeV neutrons
por: Pacifico, N, et al.
Publicado: (2015)

Charge collection studies of irradiated silicon detectors with red LED light
por: Casse, G L, et al.
Publicado: (1998)

Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
por: Henrich, Beat, et al.
Publicado: (1997)

Charge collection in Si detectors irradiated in situ at superfluid helium temperature
por: Verbitskaya, Elena, et al.
Publicado: (2015)

A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24-GeV/c protons
por: Pacifico, Nicola, et al.
Publicado: (2010)

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade
por: Hara, K, et al.
Publicado: (2016)

Charge collection efficiency of standard and oxygenated silicon microstrip detectors
por: Stavitski, I, et al.
Publicado: (2002)

Beam test results on n+ on n type silicon microstrip detectors before and after neutron irradiation
por: Angarano, Matteo Maria, et al.
Publicado: (1999)

Fluence determination by scattering measurements
por: Albergo, S, et al.
Publicado: (2000)

Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors
por: Lemeilleur, F, et al.
Publicado: (1992)

Bias-dependent annealing of radiation damage in neutron-irradiated silicon p+ n n+ diodes
por: Cindro, V, et al.
Publicado: (1998)

Damage observed in silicon diodes after low-energy pion irradiation
por: Aarnio, Pertti A, et al.
Publicado: (1995)

Cannot write session to /tmp/vufind_sessions/sess_46jr1p9g3n3r7fiqnggku5nomi