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Silicon detectors irradiated "in situ" at cryogenic temperatures

Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation...

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Detalles Bibliográficos
Autores principales: Ruggiero, G, Abreu, M, Bell, W, Berglund, P, de Boer, Wim, Borer, K, Buontempo, S, Casagrande, L, Chapuy, S, Cindro, V, Collins, P, D'Ambrosio, N, Da Vià, C, Devine, S R H, Dezillie, B, Dimcovski, Zlatomir, Eremin, V V, Esposito, A P, Granata, V, Grigoriev, E, Grohmann, S, Hauler, F, Heijne, Erik H M, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, T O, O'Shea, V, Pagano, S, Palmieri, V G, Paul, S, Pretzl, Klaus P, Rato-Mendes, P, Smith, K, Sonderegger, P, Sousa, P, Verbitskaya, E, Watts, S, Zavrtanik, M
Lenguaje:eng
Publicado: 2002
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)01645-X
http://cds.cern.ch/record/548122
_version_ 1780898452669988864
author Ruggiero, G
Abreu, M
Bell, W
Berglund, P
de Boer, Wim
Borer, K
Buontempo, S
Casagrande, L
Chapuy, S
Cindro, V
Collins, P
D'Ambrosio, N
Da Vià, C
Devine, S R H
Dezillie, B
Dimcovski, Zlatomir
Eremin, V V
Esposito, A P
Granata, V
Grigoriev, E
Grohmann, S
Hauler, F
Heijne, Erik H M
Heising, S
Janos, S
Jungermann, L
Konorov, I
Li, Z
Lourenço, C
Mikuz, M
Niinikoski, T O
O'Shea, V
Pagano, S
Palmieri, V G
Paul, S
Pretzl, Klaus P
Rato-Mendes, P
Smith, K
Sonderegger, P
Sousa, P
Verbitskaya, E
Watts, S
Zavrtanik, M
author_facet Ruggiero, G
Abreu, M
Bell, W
Berglund, P
de Boer, Wim
Borer, K
Buontempo, S
Casagrande, L
Chapuy, S
Cindro, V
Collins, P
D'Ambrosio, N
Da Vià, C
Devine, S R H
Dezillie, B
Dimcovski, Zlatomir
Eremin, V V
Esposito, A P
Granata, V
Grigoriev, E
Grohmann, S
Hauler, F
Heijne, Erik H M
Heising, S
Janos, S
Jungermann, L
Konorov, I
Li, Z
Lourenço, C
Mikuz, M
Niinikoski, T O
O'Shea, V
Pagano, S
Palmieri, V G
Paul, S
Pretzl, Klaus P
Rato-Mendes, P
Smith, K
Sonderegger, P
Sousa, P
Verbitskaya, E
Watts, S
Zavrtanik, M
author_sort Ruggiero, G
collection CERN
description Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation of 450 GeV protons at 83 K will be presented, showing that after a dose of 1.2 * 10/sup 15/ p cm/sup -2/ a charge collection efficiency (CCE) of 55% is reached at 200 V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing. (8 refs).
id cern-548122
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-5481222019-09-30T06:29:59Zdoi:10.1016/S0168-9002(01)01645-Xhttp://cds.cern.ch/record/548122engRuggiero, GAbreu, MBell, WBerglund, Pde Boer, WimBorer, KBuontempo, SCasagrande, LChapuy, SCindro, VCollins, PD'Ambrosio, NDa Vià, CDevine, S R HDezillie, BDimcovski, ZlatomirEremin, V VEsposito, A PGranata, VGrigoriev, EGrohmann, SHauler, FHeijne, Erik H MHeising, SJanos, SJungermann, LKonorov, ILi, ZLourenço, CMikuz, MNiinikoski, T OO'Shea, VPagano, SPalmieri, V GPaul, SPretzl, Klaus PRato-Mendes, PSmith, KSonderegger, PSousa, PVerbitskaya, EWatts, SZavrtanik, MSilicon detectors irradiated "in situ" at cryogenic temperaturesHealth Physics and Radiation EffectsThough several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation of 450 GeV protons at 83 K will be presented, showing that after a dose of 1.2 * 10/sup 15/ p cm/sup -2/ a charge collection efficiency (CCE) of 55% is reached at 200 V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing. (8 refs).oai:cds.cern.ch:5481222002
spellingShingle Health Physics and Radiation Effects
Ruggiero, G
Abreu, M
Bell, W
Berglund, P
de Boer, Wim
Borer, K
Buontempo, S
Casagrande, L
Chapuy, S
Cindro, V
Collins, P
D'Ambrosio, N
Da Vià, C
Devine, S R H
Dezillie, B
Dimcovski, Zlatomir
Eremin, V V
Esposito, A P
Granata, V
Grigoriev, E
Grohmann, S
Hauler, F
Heijne, Erik H M
Heising, S
Janos, S
Jungermann, L
Konorov, I
Li, Z
Lourenço, C
Mikuz, M
Niinikoski, T O
O'Shea, V
Pagano, S
Palmieri, V G
Paul, S
Pretzl, Klaus P
Rato-Mendes, P
Smith, K
Sonderegger, P
Sousa, P
Verbitskaya, E
Watts, S
Zavrtanik, M
Silicon detectors irradiated "in situ" at cryogenic temperatures
title Silicon detectors irradiated "in situ" at cryogenic temperatures
title_full Silicon detectors irradiated "in situ" at cryogenic temperatures
title_fullStr Silicon detectors irradiated "in situ" at cryogenic temperatures
title_full_unstemmed Silicon detectors irradiated "in situ" at cryogenic temperatures
title_short Silicon detectors irradiated "in situ" at cryogenic temperatures
title_sort silicon detectors irradiated "in situ" at cryogenic temperatures
topic Health Physics and Radiation Effects
url https://dx.doi.org/10.1016/S0168-9002(01)01645-X
http://cds.cern.ch/record/548122
work_keys_str_mv AT ruggierog silicondetectorsirradiatedinsituatcryogenictemperatures
AT abreum silicondetectorsirradiatedinsituatcryogenictemperatures
AT bellw silicondetectorsirradiatedinsituatcryogenictemperatures
AT berglundp silicondetectorsirradiatedinsituatcryogenictemperatures
AT deboerwim silicondetectorsirradiatedinsituatcryogenictemperatures
AT borerk silicondetectorsirradiatedinsituatcryogenictemperatures
AT buontempos silicondetectorsirradiatedinsituatcryogenictemperatures
AT casagrandel silicondetectorsirradiatedinsituatcryogenictemperatures
AT chapuys silicondetectorsirradiatedinsituatcryogenictemperatures
AT cindrov silicondetectorsirradiatedinsituatcryogenictemperatures
AT collinsp silicondetectorsirradiatedinsituatcryogenictemperatures
AT dambrosion silicondetectorsirradiatedinsituatcryogenictemperatures
AT daviac silicondetectorsirradiatedinsituatcryogenictemperatures
AT devinesrh silicondetectorsirradiatedinsituatcryogenictemperatures
AT dezillieb silicondetectorsirradiatedinsituatcryogenictemperatures
AT dimcovskizlatomir silicondetectorsirradiatedinsituatcryogenictemperatures
AT ereminvv silicondetectorsirradiatedinsituatcryogenictemperatures
AT espositoap silicondetectorsirradiatedinsituatcryogenictemperatures
AT granatav silicondetectorsirradiatedinsituatcryogenictemperatures
AT grigorieve silicondetectorsirradiatedinsituatcryogenictemperatures
AT grohmanns silicondetectorsirradiatedinsituatcryogenictemperatures
AT haulerf silicondetectorsirradiatedinsituatcryogenictemperatures
AT heijneerikhm silicondetectorsirradiatedinsituatcryogenictemperatures
AT heisings silicondetectorsirradiatedinsituatcryogenictemperatures
AT janoss silicondetectorsirradiatedinsituatcryogenictemperatures
AT jungermannl silicondetectorsirradiatedinsituatcryogenictemperatures
AT konorovi silicondetectorsirradiatedinsituatcryogenictemperatures
AT liz silicondetectorsirradiatedinsituatcryogenictemperatures
AT lourencoc silicondetectorsirradiatedinsituatcryogenictemperatures
AT mikuzm silicondetectorsirradiatedinsituatcryogenictemperatures
AT niinikoskito silicondetectorsirradiatedinsituatcryogenictemperatures
AT osheav silicondetectorsirradiatedinsituatcryogenictemperatures
AT paganos silicondetectorsirradiatedinsituatcryogenictemperatures
AT palmierivg silicondetectorsirradiatedinsituatcryogenictemperatures
AT pauls silicondetectorsirradiatedinsituatcryogenictemperatures
AT pretzlklausp silicondetectorsirradiatedinsituatcryogenictemperatures
AT ratomendesp silicondetectorsirradiatedinsituatcryogenictemperatures
AT smithk silicondetectorsirradiatedinsituatcryogenictemperatures
AT sondereggerp silicondetectorsirradiatedinsituatcryogenictemperatures
AT sousap silicondetectorsirradiatedinsituatcryogenictemperatures
AT verbitskayae silicondetectorsirradiatedinsituatcryogenictemperatures
AT wattss silicondetectorsirradiatedinsituatcryogenictemperatures
AT zavrtanikm silicondetectorsirradiatedinsituatcryogenictemperatures