The silicon pixel sensors in ATLAS

The ATLAS experiment is now in the process of finalizing the development of the design of silicon pixel sensors for use in the pixel detector. The sensors will be operated in a severe LHC radiation environment with bias voltages at the end of lifetime up to 600 V while maintaining a good signal-to-noise ratio and charge collection efficiency, small cell size and minimal multiple scattering. The radiation hardness issues and quality assurance procedures are discussed. (4 refs).