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Defect identification by means of electric field gradient calculation
The electric field gradients (EFG) caused by group V acceptors, group Ib acceptors and the Cd vacancy in CdTe are calculated using the linearised augmented plane wave method and compared to the corresponding experimental values. Experimentally, the EFG are determined by the perturbed gamma gamma -an...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0921-4526(01)00853-5 http://cds.cern.ch/record/560277 |
| Sumario: | The electric field gradients (EFG) caused by group V acceptors, group Ib acceptors and the Cd vacancy in CdTe are calculated using the linearised augmented plane wave method and compared to the corresponding experimental values. Experimentally, the EFG are determined by the perturbed gamma gamma -angular correlation spectroscopy with the radioactive probe isotopes /sup 111/In and /sup 77/Br. Besides the chemical nature, information about the charge state and the lattice relaxation associated with each defect is obtained. (13 refs). |
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