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Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures
This study presents the results on the modeling of the electric field distribution, which is controlled by injection and trapping of non- equilibrium carriers, in Si detectors irradiated by high neutron fluences. Analytical calculation of the electric field distribution in detectors irradiated by ne...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2002
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2002.998650 http://cds.cern.ch/record/560378 |