Investigation of design parameters for radiation hard silicon microstrip detectors

In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurem...

Descripción completa

Detalles Bibliográficos
Autores principales: Braibant, S, Demaria, N, Feld, L, Frey, A, Fürtjes, A, Glessing, W D, Hammarström, R, Honma, A, Mannelli, M, Mariotti, C, Mättig, P, Migliore, E, Piperov, S, Runólfsson, O, Schmitt, B, Söldner-Rembold, S, Surrow, B
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)02120-9
http://cds.cern.ch/record/590836
_version_ 1780899656788606976
author Braibant, S
Demaria, N
Feld, L
Frey, A
Fürtjes, A
Glessing, W D
Hammarström, R
Honma, A
Mannelli, M
Mariotti, C
Mättig, P
Migliore, E
Piperov, S
Runólfsson, O
Schmitt, B
Söldner-Rembold, S
Surrow, B
author_facet Braibant, S
Demaria, N
Feld, L
Frey, A
Fürtjes, A
Glessing, W D
Hammarström, R
Honma, A
Mannelli, M
Mariotti, C
Mättig, P
Migliore, E
Piperov, S
Runólfsson, O
Schmitt, B
Söldner-Rembold, S
Surrow, B
author_sort Braibant, S
collection CERN
description In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 mu m and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either <111> or <100> crystal orientation, of resistivities between 1 and 6 k Omega cm and of thicknesses between 300 and 410 mu m. The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3*10/sup 14/ cm /sup -2/. (15 refs).
id cern-590836
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-5908362019-09-30T06:29:59Zdoi:10.1016/S0168-9002(01)02120-9http://cds.cern.ch/record/590836engBraibant, SDemaria, NFeld, LFrey, AFürtjes, AGlessing, W DHammarström, RHonma, AMannelli, MMariotti, CMättig, PMigliore, EPiperov, SRunólfsson, OSchmitt, BSöldner-Rembold, SSurrow, BInvestigation of design parameters for radiation hard silicon microstrip detectorsDetectors and Experimental TechniquesIn the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 mu m and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either <111> or <100> crystal orientation, of resistivities between 1 and 6 k Omega cm and of thicknesses between 300 and 410 mu m. The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3*10/sup 14/ cm /sup -2/. (15 refs).oai:cds.cern.ch:5908362002
spellingShingle Detectors and Experimental Techniques
Braibant, S
Demaria, N
Feld, L
Frey, A
Fürtjes, A
Glessing, W D
Hammarström, R
Honma, A
Mannelli, M
Mariotti, C
Mättig, P
Migliore, E
Piperov, S
Runólfsson, O
Schmitt, B
Söldner-Rembold, S
Surrow, B
Investigation of design parameters for radiation hard silicon microstrip detectors
title Investigation of design parameters for radiation hard silicon microstrip detectors
title_full Investigation of design parameters for radiation hard silicon microstrip detectors
title_fullStr Investigation of design parameters for radiation hard silicon microstrip detectors
title_full_unstemmed Investigation of design parameters for radiation hard silicon microstrip detectors
title_short Investigation of design parameters for radiation hard silicon microstrip detectors
title_sort investigation of design parameters for radiation hard silicon microstrip detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(01)02120-9
http://cds.cern.ch/record/590836
work_keys_str_mv AT braibants investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT demarian investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT feldl investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT freya investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT furtjesa investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT glessingwd investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT hammarstromr investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT honmaa investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT mannellim investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT mariottic investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT mattigp investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT miglioree investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT piperovs investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT runolfssono investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT schmittb investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT soldnerrembolds investigationofdesignparametersforradiationhardsiliconmicrostripdetectors
AT surrowb investigationofdesignparametersforradiationhardsiliconmicrostripdetectors

Ejemplares similares