Investigation of design parameters for radiation hard silicon microstrip detectors

In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurem...

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Detalles Bibliográficos
Autores principales: Braibant, S, Demaria, N, Feld, L, Frey, A, Fürtjes, A, Glessing, W D, Hammarström, R, Honma, A, Mannelli, M, Mariotti, C, Mättig, P, Migliore, E, Piperov, S, Runólfsson, O, Schmitt, B, Söldner-Rembold, S, Surrow, B
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)02120-9
http://cds.cern.ch/record/590836

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