Charge collection efficiency of standard and oxygenated silicon microstrip detectors

Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3 * 10/sup 14/ cm/sup -2/. Charge collection efficiency measurements, performed by pulsing the det...

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Detalles Bibliográficos
Autores principales: Stavitski, I, Rando, R, Bisello, D, Bacchetta, N, Candelori, A, Kaminski, A, Wyss, J
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(02)00539-9
http://cds.cern.ch/record/590838
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author Stavitski, I
Rando, R
Bisello, D
Bacchetta, N
Candelori, A
Kaminski, A
Wyss, J
author_facet Stavitski, I
Rando, R
Bisello, D
Bacchetta, N
Candelori, A
Kaminski, A
Wyss, J
author_sort Stavitski, I
collection CERN
description Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3 * 10/sup 14/ cm/sup -2/. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060 mu m wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors. (10 refs).
id cern-590838
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-5908382019-09-30T06:29:59Zdoi:10.1016/S0168-9002(02)00539-9http://cds.cern.ch/record/590838engStavitski, IRando, RBisello, DBacchetta, NCandelori, AKaminski, AWyss, JCharge collection efficiency of standard and oxygenated silicon microstrip detectorsDetectors and Experimental TechniquesTwo silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3 * 10/sup 14/ cm/sup -2/. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060 mu m wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors. (10 refs).oai:cds.cern.ch:5908382002
spellingShingle Detectors and Experimental Techniques
Stavitski, I
Rando, R
Bisello, D
Bacchetta, N
Candelori, A
Kaminski, A
Wyss, J
Charge collection efficiency of standard and oxygenated silicon microstrip detectors
title Charge collection efficiency of standard and oxygenated silicon microstrip detectors
title_full Charge collection efficiency of standard and oxygenated silicon microstrip detectors
title_fullStr Charge collection efficiency of standard and oxygenated silicon microstrip detectors
title_full_unstemmed Charge collection efficiency of standard and oxygenated silicon microstrip detectors
title_short Charge collection efficiency of standard and oxygenated silicon microstrip detectors
title_sort charge collection efficiency of standard and oxygenated silicon microstrip detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(02)00539-9
http://cds.cern.ch/record/590838
work_keys_str_mv AT stavitskii chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors
AT randor chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors
AT bisellod chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors
AT bacchettan chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors
AT candeloria chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors
AT kaminskia chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors
AT wyssj chargecollectionefficiencyofstandardandoxygenatedsiliconmicrostripdetectors

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