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Charge collection efficiency of standard and oxygenated silicon microstrip detectors
Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3 * 10/sup 14/ cm/sup -2/. Charge collection efficiency measurements, performed by pulsing the det...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2002
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(02)00539-9 http://cds.cern.ch/record/590838 |