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Radiation damage annealing of Hg implanted InP

The formation of shallow p-type layers in InP has been previously achieved by Hg implantation. In this work, for the first time, microscopic information of the near surrounding of the Hg dopant and the recovery of the damaged layer is derived combining RBS and hyperfine interactions studies. It is s...

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Detalles Bibliográficos
Autores principales:	Correia, J G, Marques, J G, Soares, J C, Alves, E, Da Silva, M F A, Freitag, K, Vianden, R
Lenguaje:	eng
Publicado:	1995
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1016/S0168-583X(96)00518-6 http://cds.cern.ch/record/592052

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