Study of radiation damage and substrate resistivity effects from beam test of silicon microstrip detectors using LHC readout electronics

We present the beam test results of single-sided silicon microstrip detectors, with different substrate resistivities. The effects of radiation damage are studied for a detector irradiated to a fluence of 2.4 multiplied by 10**1**4 n/cm**2. The detectors are read out with the APV6 chip, which is com...

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Detalles Bibliográficos
Autores principales: Angarano, Matteo Maria, Beaumont, Willem, Brunetti, Maria Teresa, Civinini, Carlo, Coughlan, John A, De Palma, Mauro, Drouhin, Frédéric, French, Marcus, Fürtjes, A, Biasini, Maurizio, Bilei, Gian Mario, Checcucci, Bruno, Creanza, Donato, Fano, Livio, Fiore, Luigi, Giorgi, Marco, Lariccia, Paolo, Maggi, Giorgio, Mantovani, Giancarlo, Messina, Giulia, My, Salvatore, Papi, Andrea, Radicci, Valeria, Santinelli, Roberto, Selvaggi, Giovanna, Servoli, Leonello, Silvestris, Lucia, Tempesta, Paolo
Lenguaje:eng
Publicado: 2000
Materias:
Health Physics and Radiation Effects
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(02)00267-X
http://cds.cern.ch/record/593000
Descripción
Sumario:We present the beam test results of single-sided silicon microstrip detectors, with different substrate resistivities. The effects of radiation damage are studied for a detector irradiated to a fluence of 2.4 multiplied by 10**1**4 n/cm**2. The detectors are read out with the APV6 chip, which is compatible with the 40 MHz LHC clock. The performance of different detectors and readout modes are studied in terms of signal-to-noise ratio and efficiency.

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