Cargando…

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). A...

Descripción completa

Detalles Bibliográficos
Autores principales: Fretwurst, E., Lindstrom, G., Stahl, J., Pintilie, I.
Lenguaje:eng
Publicado: 2002
Materias:
Acceso en línea:http://cds.cern.ch/record/594033
_version_ 1780899743051808768
author Fretwurst, E.
Lindstrom, G.
Stahl, J.
Pintilie, I.
author_facet Fretwurst, E.
Lindstrom, G.
Stahl, J.
Pintilie, I.
author_sort Fretwurst, E.
collection CERN
description The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage. The 2nd contribution deals with defects introduced either by processing steps or being inherent to the as grown silicon. The last two papers concentrate on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work.
id cern-594033
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-5940332019-09-30T06:29:59Zhttp://cds.cern.ch/record/594033engFretwurst, E.Lindstrom, G.Stahl, J.Pintilie, I.Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic IrradiationOther Fields of PhysicsThe report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage. The 2nd contribution deals with defects introduced either by processing steps or being inherent to the as grown silicon. The last two papers concentrate on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work.physics/0211118DESY-02-199DESY-02-199DESY-2002-199oai:cds.cern.ch:5940332002-11-28
spellingShingle Other Fields of Physics
Fretwurst, E.
Lindstrom, G.
Stahl, J.
Pintilie, I.
Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
title Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
title_full Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
title_fullStr Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
title_full_unstemmed Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
title_short Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
title_sort radiation damage in silicon detectors caused by hadronic and electromagnetic irradiation
topic Other Fields of Physics
url http://cds.cern.ch/record/594033
work_keys_str_mv AT fretwurste radiationdamageinsilicondetectorscausedbyhadronicandelectromagneticirradiation
AT lindstromg radiationdamageinsilicondetectorscausedbyhadronicandelectromagneticirradiation
AT stahlj radiationdamageinsilicondetectorscausedbyhadronicandelectromagneticirradiation
AT pintiliei radiationdamageinsilicondetectorscausedbyhadronicandelectromagneticirradiation