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Electrical characteristics of silicon pixel detectors
Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from pro...
Autores principales: | , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2002
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(02)00557-0 http://cds.cern.ch/record/597178 |
_version_ | 1780899895876517888 |
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author | Gorelov, I Gorfine, G W Hoeferkamp, M Mata-Bruni, V Santistevan, G Seidel, S C Ciocio, A Einsweiler, Kevin F Emes, J Gilchriese, M G D Joshi, A Kleinfelder, S A Marchesini, R McCormack, F Milgrome, O |
author_facet | Gorelov, I Gorfine, G W Hoeferkamp, M Mata-Bruni, V Santistevan, G Seidel, S C Ciocio, A Einsweiler, Kevin F Emes, J Gilchriese, M G D Joshi, A Kleinfelder, S A Marchesini, R McCormack, F Milgrome, O |
author_sort | Gorelov, I |
collection | CERN |
description | Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation. |
id | cern-597178 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2002 |
record_format | invenio |
spelling | cern-5971782019-09-30T06:29:59Zdoi:10.1016/S0168-9002(02)00557-0http://cds.cern.ch/record/597178engGorelov, IGorfine, G WHoeferkamp, MMata-Bruni, VSantistevan, GSeidel, S CCiocio, AEinsweiler, Kevin FEmes, JGilchriese, M G DJoshi, AKleinfelder, S AMarchesini, RMcCormack, FMilgrome, OElectrical characteristics of silicon pixel detectorsDetectors and Experimental TechniquesPrototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.oai:cds.cern.ch:5971782002 |
spellingShingle | Detectors and Experimental Techniques Gorelov, I Gorfine, G W Hoeferkamp, M Mata-Bruni, V Santistevan, G Seidel, S C Ciocio, A Einsweiler, Kevin F Emes, J Gilchriese, M G D Joshi, A Kleinfelder, S A Marchesini, R McCormack, F Milgrome, O Electrical characteristics of silicon pixel detectors |
title | Electrical characteristics of silicon pixel detectors |
title_full | Electrical characteristics of silicon pixel detectors |
title_fullStr | Electrical characteristics of silicon pixel detectors |
title_full_unstemmed | Electrical characteristics of silicon pixel detectors |
title_short | Electrical characteristics of silicon pixel detectors |
title_sort | electrical characteristics of silicon pixel detectors |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1016/S0168-9002(02)00557-0 http://cds.cern.ch/record/597178 |
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