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Electrical characteristics of silicon pixel detectors

Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from pro...

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Detalles Bibliográficos
Autores principales: Gorelov, I, Gorfine, G W, Hoeferkamp, M, Mata-Bruni, V, Santistevan, G, Seidel, S C, Ciocio, A, Einsweiler, Kevin F, Emes, J, Gilchriese, M G D, Joshi, A, Kleinfelder, S A, Marchesini, R, McCormack, F, Milgrome, O
Lenguaje:eng
Publicado: 2002
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(02)00557-0
http://cds.cern.ch/record/597178
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author Gorelov, I
Gorfine, G W
Hoeferkamp, M
Mata-Bruni, V
Santistevan, G
Seidel, S C
Ciocio, A
Einsweiler, Kevin F
Emes, J
Gilchriese, M G D
Joshi, A
Kleinfelder, S A
Marchesini, R
McCormack, F
Milgrome, O
author_facet Gorelov, I
Gorfine, G W
Hoeferkamp, M
Mata-Bruni, V
Santistevan, G
Seidel, S C
Ciocio, A
Einsweiler, Kevin F
Emes, J
Gilchriese, M G D
Joshi, A
Kleinfelder, S A
Marchesini, R
McCormack, F
Milgrome, O
author_sort Gorelov, I
collection CERN
description Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
id cern-597178
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-5971782019-09-30T06:29:59Zdoi:10.1016/S0168-9002(02)00557-0http://cds.cern.ch/record/597178engGorelov, IGorfine, G WHoeferkamp, MMata-Bruni, VSantistevan, GSeidel, S CCiocio, AEinsweiler, Kevin FEmes, JGilchriese, M G DJoshi, AKleinfelder, S AMarchesini, RMcCormack, FMilgrome, OElectrical characteristics of silicon pixel detectorsDetectors and Experimental TechniquesPrototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.oai:cds.cern.ch:5971782002
spellingShingle Detectors and Experimental Techniques
Gorelov, I
Gorfine, G W
Hoeferkamp, M
Mata-Bruni, V
Santistevan, G
Seidel, S C
Ciocio, A
Einsweiler, Kevin F
Emes, J
Gilchriese, M G D
Joshi, A
Kleinfelder, S A
Marchesini, R
McCormack, F
Milgrome, O
Electrical characteristics of silicon pixel detectors
title Electrical characteristics of silicon pixel detectors
title_full Electrical characteristics of silicon pixel detectors
title_fullStr Electrical characteristics of silicon pixel detectors
title_full_unstemmed Electrical characteristics of silicon pixel detectors
title_short Electrical characteristics of silicon pixel detectors
title_sort electrical characteristics of silicon pixel detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(02)00557-0
http://cds.cern.ch/record/597178
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