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Complementary bipolar application specific analog semicustom array, intended to implement front-end units

The structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics,...

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Autores principales: Atkin, E, Ilyushchenko, V I, Kondratenko, S, Maslennikov, V, Meshcheriakov, V, Mishin, Yu, Volkov, Yu
Lenguaje:eng
Publicado: CERN 2002
Materias:
Acceso en línea:https://dx.doi.org/10.5170/CERN-2002-003.377
http://cds.cern.ch/record/619199
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author Atkin, E
Ilyushchenko, V I
Kondratenko, S
Maslennikov, V
Meshcheriakov, V
Mishin, Yu
Volkov, Yu
author_facet Atkin, E
Ilyushchenko, V I
Kondratenko, S
Maslennikov, V
Meshcheriakov, V
Mishin, Yu
Volkov, Yu
author_sort Atkin, E
collection CERN
description The structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics, supply voltages from 1.5 V to 15 V, transistor current gains Bst~100 and unity gain frequencies Ft > 3 GHz at collector currents of (100...300) mu A, high- and low-ohmic resistors, MOS capacitors, minimum two variable plating levels available. Specific circuit diagrams and parameters of the front-end electronics ICs, created on the basis of the considered array, are presented. The results of their tests are given. (4 refs).
id cern-619199
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
publisher CERN
record_format invenio
spelling cern-6191992019-09-30T06:29:59Zdoi:10.5170/CERN-2002-003.377http://cds.cern.ch/record/619199engAtkin, EIlyushchenko, V IKondratenko, SMaslennikov, VMeshcheriakov, VMishin, YuVolkov, YuComplementary bipolar application specific analog semicustom array, intended to implement front-end unitsDetectors and Experimental TechniquesThe structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics, supply voltages from 1.5 V to 15 V, transistor current gains Bst~100 and unity gain frequencies Ft > 3 GHz at collector currents of (100...300) mu A, high- and low-ohmic resistors, MOS capacitors, minimum two variable plating levels available. Specific circuit diagrams and parameters of the front-end electronics ICs, created on the basis of the considered array, are presented. The results of their tests are given. (4 refs).CERNoai:cds.cern.ch:6191992002
spellingShingle Detectors and Experimental Techniques
Atkin, E
Ilyushchenko, V I
Kondratenko, S
Maslennikov, V
Meshcheriakov, V
Mishin, Yu
Volkov, Yu
Complementary bipolar application specific analog semicustom array, intended to implement front-end units
title Complementary bipolar application specific analog semicustom array, intended to implement front-end units
title_full Complementary bipolar application specific analog semicustom array, intended to implement front-end units
title_fullStr Complementary bipolar application specific analog semicustom array, intended to implement front-end units
title_full_unstemmed Complementary bipolar application specific analog semicustom array, intended to implement front-end units
title_short Complementary bipolar application specific analog semicustom array, intended to implement front-end units
title_sort complementary bipolar application specific analog semicustom array, intended to implement front-end units
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2002-003.377
http://cds.cern.ch/record/619199
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