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Complementary bipolar application specific analog semicustom array, intended to implement front-end units
The structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics,...
Autores principales: | , , , , , , |
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Lenguaje: | eng |
Publicado: |
CERN
2002
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-2002-003.377 http://cds.cern.ch/record/619199 |
_version_ | 1780900334558773248 |
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author | Atkin, E Ilyushchenko, V I Kondratenko, S Maslennikov, V Meshcheriakov, V Mishin, Yu Volkov, Yu |
author_facet | Atkin, E Ilyushchenko, V I Kondratenko, S Maslennikov, V Meshcheriakov, V Mishin, Yu Volkov, Yu |
author_sort | Atkin, E |
collection | CERN |
description | The structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics, supply voltages from 1.5 V to 15 V, transistor current gains Bst~100 and unity gain frequencies Ft > 3 GHz at collector currents of (100...300) mu A, high- and low-ohmic resistors, MOS capacitors, minimum two variable plating levels available. Specific circuit diagrams and parameters of the front-end electronics ICs, created on the basis of the considered array, are presented. The results of their tests are given. (4 refs). |
id | cern-619199 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2002 |
publisher | CERN |
record_format | invenio |
spelling | cern-6191992019-09-30T06:29:59Zdoi:10.5170/CERN-2002-003.377http://cds.cern.ch/record/619199engAtkin, EIlyushchenko, V IKondratenko, SMaslennikov, VMeshcheriakov, VMishin, YuVolkov, YuComplementary bipolar application specific analog semicustom array, intended to implement front-end unitsDetectors and Experimental TechniquesThe structure of an analog semicustom array, intended to implement front-end electronics ICs on its basis, is considered. The features of this array are: implementation with an inexpensive bipolar process despite containing an equal number of NPN and PNP structures with well matched characteristics, supply voltages from 1.5 V to 15 V, transistor current gains Bst~100 and unity gain frequencies Ft > 3 GHz at collector currents of (100...300) mu A, high- and low-ohmic resistors, MOS capacitors, minimum two variable plating levels available. Specific circuit diagrams and parameters of the front-end electronics ICs, created on the basis of the considered array, are presented. The results of their tests are given. (4 refs).CERNoai:cds.cern.ch:6191992002 |
spellingShingle | Detectors and Experimental Techniques Atkin, E Ilyushchenko, V I Kondratenko, S Maslennikov, V Meshcheriakov, V Mishin, Yu Volkov, Yu Complementary bipolar application specific analog semicustom array, intended to implement front-end units |
title | Complementary bipolar application specific analog semicustom array, intended to implement front-end units |
title_full | Complementary bipolar application specific analog semicustom array, intended to implement front-end units |
title_fullStr | Complementary bipolar application specific analog semicustom array, intended to implement front-end units |
title_full_unstemmed | Complementary bipolar application specific analog semicustom array, intended to implement front-end units |
title_short | Complementary bipolar application specific analog semicustom array, intended to implement front-end units |
title_sort | complementary bipolar application specific analog semicustom array, intended to implement front-end units |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.5170/CERN-2002-003.377 http://cds.cern.ch/record/619199 |
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