Radiation effects in the readout chip for the ATLAS Semiconductor Tracker

The ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irra...

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Detalles Bibliográficos
Autor principal: Mandic, I
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2002.805412
http://cds.cern.ch/record/620414
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author Mandic, I
author_facet Mandic, I
author_sort Mandic, I
collection CERN
description The ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irradiations of ABCD3TA chips with up to 100 kGy and 2*10/sup 14/ n/cm/sup 2/ (1-MeV neutron NIEL equivalent) done with various sources is given in this paper. Measurements of single event effects with high-energy proton and pion beams are also reported. The tests proved that the chips are sufficiently radiation hard for application in the ATLAS SCT. (16 refs).
id cern-620414
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-6204142019-09-30T06:29:59Zdoi:10.1109/TNS.2002.805412http://cds.cern.ch/record/620414engMandic, IRadiation effects in the readout chip for the ATLAS Semiconductor TrackerDetectors and Experimental TechniquesThe ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irradiations of ABCD3TA chips with up to 100 kGy and 2*10/sup 14/ n/cm/sup 2/ (1-MeV neutron NIEL equivalent) done with various sources is given in this paper. Measurements of single event effects with high-energy proton and pion beams are also reported. The tests proved that the chips are sufficiently radiation hard for application in the ATLAS SCT. (16 refs).oai:cds.cern.ch:6204142002
spellingShingle Detectors and Experimental Techniques
Mandic, I
Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
title Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
title_full Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
title_fullStr Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
title_full_unstemmed Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
title_short Radiation effects in the readout chip for the ATLAS Semiconductor Tracker
title_sort radiation effects in the readout chip for the atlas semiconductor tracker
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2002.805412
http://cds.cern.ch/record/620414
work_keys_str_mv AT mandici radiationeffectsinthereadoutchipfortheatlassemiconductortracker

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