The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extrac...

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Autores principales: Härkönen, J, Tuominen, E, Tuovinen, E, Lassila-Perini, K M, Mehtälä, P, Nummela, S, Nysten, J, Heikkilä, P, Ovchinnikov, V, Palokangas, M, Ylikoski, M, Palmu, L, Kallijärvi, S, Alanko, T, Laitinen, P
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2002.805345
http://cds.cern.ch/record/623627
_version_ 1780900466056495104
author Härkönen, J
Tuominen, E
Tuovinen, E
Lassila-Perini, K M
Mehtälä, P
Nummela, S
Nysten, J
Heikkilä, P
Ovchinnikov, V
Palokangas, M
Ylikoski, M
Palmu, L
Kallijärvi, S
Alanko, T
Laitinen, P
author_facet Härkönen, J
Tuominen, E
Tuovinen, E
Lassila-Perini, K M
Mehtälä, P
Nummela, S
Nysten, J
Heikkilä, P
Ovchinnikov, V
Palokangas, M
Ylikoski, M
Palmu, L
Kallijärvi, S
Alanko, T
Laitinen, P
author_sort Härkönen, J
collection CERN
description The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved. 14 Refs.
id cern-623627
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-6236272019-09-30T06:29:59Zdoi:10.1109/TNS.2002.805345http://cds.cern.ch/record/623627engHärkönen, JTuominen, ETuovinen, ELassila-Perini, K MMehtälä, PNummela, SNysten, JHeikkilä, POvchinnikov, VPalokangas, MYlikoski, MPalmu, LKallijärvi, SAlanko, TLaitinen, PThe effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage methodDetectors and Experimental TechniquesThe effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved. 14 Refs.oai:cds.cern.ch:6236272002
spellingShingle Detectors and Experimental Techniques
Härkönen, J
Tuominen, E
Tuovinen, E
Lassila-Perini, K M
Mehtälä, P
Nummela, S
Nysten, J
Heikkilä, P
Ovchinnikov, V
Palokangas, M
Ylikoski, M
Palmu, L
Kallijärvi, S
Alanko, T
Laitinen, P
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
title The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
title_full The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
title_fullStr The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
title_full_unstemmed The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
title_short The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
title_sort effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2002.805345
http://cds.cern.ch/record/623627
work_keys_str_mv AT harkonenj theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT tuominene theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT tuovinene theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT lassilaperinikm theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT mehtalap theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT nummelas theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT nystenj theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT heikkilap theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT ovchinnikovv theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT palokangasm theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT ylikoskim theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT palmul theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT kallijarvis theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT alankot theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT laitinenp theeffectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT harkonenj effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT tuominene effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT tuovinene effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT lassilaperinikm effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT mehtalap effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT nummelas effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT nystenj effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT heikkilap effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT ovchinnikovv effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT palokangasm effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT ylikoskim effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT palmul effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT kallijarvis effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT alankot effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod
AT laitinenp effectofoxygenationontheradiationhardnessofsiliconstudiedbysurfacephotovoltagemethod

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