The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extrac...

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Detalles Bibliográficos
Autores principales: Härkönen, J, Tuominen, E, Tuovinen, E, Lassila-Perini, K M, Mehtälä, P, Nummela, S, Nysten, J, Heikkilä, P, Ovchinnikov, V, Palokangas, M, Ylikoski, M, Palmu, L, Kallijärvi, S, Alanko, T, Laitinen, P
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2002.805345
http://cds.cern.ch/record/623627

Internet

https://dx.doi.org/10.1109/TNS.2002.805345
http://cds.cern.ch/record/623627

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