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Irradiation studies of silicon pixel detectors for CMS

Prototype n**+ on n sensors with different guard rings and p-stop isolation designs were developed for the CMS Forward Pixel System. The prototype sensors were irradiated to a fluence equivalent to that expected after 6 years of operation at the LHC. I-V characteristics of these sensors after irradi...

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Detalles Bibliográficos
Autores principales: Bölla, G, Bortoletto, Daniela, Giolo, K, Horisberger, R P, Rohe, T, Rott, C, Roy, A
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(02)02026-0
http://cds.cern.ch/record/624599
Descripción
Sumario:Prototype n**+ on n sensors with different guard rings and p-stop isolation designs were developed for the CMS Forward Pixel System. The prototype sensors were irradiated to a fluence equivalent to that expected after 6 years of operation at the LHC. I-V characteristics of these sensors after irradiation were measured.