Study of the discharge gas trapping during thin film growth

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New data on the amount of sputter gas implanted in thin films are presented, complementing the results reported in the note CERN-EST-99-005-SM, published in Vacuum, Vol. 60, 1-2 (2001) Pp. 89-94. A detailed study has been performed for Ti, Zr, and V and for TiZr and TiVZr alloys.

Detalles Bibliográficos
Autores principales: Calatroni, S, Benvenuti, Cristoforo, Carver, J, Chiggiato, P, Clair, S, Neupert, H, Vollenberg, W
Lenguaje:eng
Publicado: 2003
Materias:
Accelerators and Storage Rings
Acceso en línea:http://cds.cern.ch/record/628983

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