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The influence of oxygen on the lattice sites of rare earths in silicon
We have used conversion electron emission channeling to investigate the lattice sites of following implantation of the radioactive isotope into CZ Si and FZ Si at varying doses (6 $\times 10^{12} – 5 \times 10^{13}$ cm$^{−2}$). In all cases isothermal annealing at 900°C caused Er to leave its prefer...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0022-2313(98)00116-1 http://cds.cern.ch/record/638157 |