Lattice location of implanted Cu in highly doped Si

We report on the lattice location of ion-implanted $^{67}$Cu in $p^{+}$- and $n^{+}$-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both $p^{+}$- and $n^{+}$-Si. Annealing in the temperature range 200-600°C resulted in changes of near-substitutional Cu to random sites in $p^{+}$-Si, while in $n^{+}$-Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7-2.0 eV for near-substitutional Cu in $p^{+}$-Si and 2.9(2) eV for ideal substitutional Cu in $n^{+}$-Si.